Scattering induced current in a tight-binding band

نویسندگان

  • L. Bruneau
  • S. De Bièvre
چکیده

In the single band tight-binding approximation, we consider the transport properties of an electron subject to a homogeneous static electric field. We show that repeated interactions of the electron with two-level systems in thermal equilibrium suppress the Bloch oscillations and induce a steady current, the statistical properties of which we study. [email protected] 95000 Cergy-Pontoise, France [email protected] F-59655 V’d’Ascq Cedex, France Parc Scient. de la Haute Borne, 40, avenue Halley B.P. 70478, F-59658 V’d’Ascq cedex, France [email protected] UMR 6207: Univ. de Provence, Univ. de la Méditerranée, Univ. de Toulon et CNRS, FRUMAM B.P. 20132, 83957 La Garde Cedex, France

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Tight- binding study of electronic band structure of anisotropic honeycomb lattice

 The two-dimensional structure of graphene, consisting of an isotropic hexagonal lattice of carbon atoms, shows fascinating electronic properties, such as a gapless energy band and Dirac fermion behavior of electrons at fermi surface. Anisotropy can be induced in this structure by electrochemical pressure. In this article, by using tight-binding method, we review anisotropy effects in the elect...

متن کامل

Full-Band Quantum Transport Simulation Based on Tight-Binding Green’s Function Method

Modeling and formulation of full-band quantum transport based on a nonequilibrium tight-binding Green’s function method are presented where realistic band structures, evanescent-mode matching, space charge effect, and scattering effects are taken into account. Our results show that current-voltage characteristics of a GaAs/AlAs double-barrier RTD have larger current densities than the conventio...

متن کامل

Electronic band structure of a Carbon nanotube superlattice

By employing the theoretical method based on tight-binding, we study electronic band structure of single-wall carbon nanotube (CNT) superlattices, which the system is the made of the junction between the zigzag and armchair carbon nanotubes. Exactly at the place of connection, it is appeared the pentagon–heptagon pairs as topological defect in carbon hexagonal network. The calculations are base...

متن کامل

Electronic band structure of a Carbon nanotube superlattice

By employing the theoretical method based on tight-binding, we study electronic band structure of single-wall carbon nanotube (CNT) superlattices, which the system is the made of the junction between the zigzag and armchair carbon nanotubes. Exactly at the place of connection, it is appeared the pentagon–heptagon pairs as topological defect in carbon hexagonal network. The calculations are base...

متن کامل

Scattering in Si-Nanowires - Where Does it Matter?

Electron transport is computed in 3nm Si nanowires subject to incoherent scattering from phonons. The electronic structure of the nanowire is represented in an atomistic sp3d5s* tight binding basis. Phonon modes are computed in an atomistic valence force field rather than a continuum deformation potential. Atomistic transport and incoherent scattering are coupled through the non-equilibrium Gre...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2011